Correlation of nanostructure changes with the electrical properties of molybdenum disulfide (MoS2) as affected by sulfurization temperature
- Correlation of nanostructure changes with the electrical properties of molybdenum disulfide (MoS2) as affected by sulfurization temperature
- 이전국; 주현수; 오태경; 전형탁
- horizontal alignment; molybdenum disulfide; sulfurization
- Issue Date
- Applied physics letters
- VOL 109, NO 24-242104-4
- MoS2 layers were prepared by sulfurization at temperatures ranging from 500 C to 900C. Various microscopic analyses confirmed that the different sulfurization treatments altered the nanostructure of the MoS2 layers. Nanostructure alterations and enhanced crystallinity were observed at temperatures exceeding 800 C. The electrical properties of field-effect transistor devices fabricated from the MoS2 layers were investigated in relation to sulfurization temperature. The field-effect mobility of the MoS2 layers significantly increased with rising sulfurization temperature. The change in nanostructure and the transition to a horizontally aligned microstructure at temperatures over 800 C were explicitly correlated with the change in field-effect mobility.
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