Complementary spin transistor using a quantum well channel

Title
Complementary spin transistor using a quantum well channel
Authors
장준연구현철김형준최준우한석희박윤호최헌진
Keywords
Complementary spin transistor; Quantum well; Spin-orbit coupling; Exchange bias
Issue Date
2017-04
Publisher
Scientific Reports
Citation
VOL 7-46671-7
Abstract
In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor.
URI
https://pubs.kist.re.kr/handle/201004/65638
ISSN
2045-2322
Appears in Collections:
KIST Publication > Article
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