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dc.contributor.author민병철-
dc.contributor.author전건록-
dc.contributor.author박승영-
dc.date.accessioned2021-06-09T04:18:17Z-
dc.date.available2021-06-09T04:18:17Z-
dc.date.issued2017-09-
dc.identifier.citationVOL 56, NO 9-090303-4-
dc.identifier.issn0021-4922-
dc.identifier.other49108-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/66038-
dc.description.abstractElectrical spin accumulation that was robust against changes in temperature and bias voltage was achieved in epitaxial Co70Fe30/MgO tunnel contacts to p-type Ge, with negligible Schottky barrier formation. Hanle and inverted Hanle effects, which are characteristic features of nonequilibrium spin accumulation in the tunnel contacts, were clearly observed up to room temperature for both hole spin injection and extraction. Notably, the obtained spin signal showed weak temperature dependence even at a low bias voltage, and symmetric behavior with respect to bias polarity, which are inconsistent with spin-polarized tunneling via localized states in the contact.-
dc.publisherJapanese Journal of Applied Physics, Part 1- Regular Papers-
dc.titleWeak temperature and bias dependence of spin accumulation in epitaxial Co70Fe30/MgO tunnel contacts to p-type Ge-
dc.typeArticle-
dc.relation.page090303-1090303-4-
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