A systematic study of a capacitorless 1T-DRAM fabricated in 28 nm FDSOI technology is presented. The operation mechanism is based on band modulation. The Z2-FET memory cell features a large current sense margin and small OFF-state current at 25 °C and 85 °C. Moreover, low power consumption during state ‘1’ writing is achieved with ~ 0.5 V programming voltage. These specifications make the Z2-FET an outstanding candidate for low-power eDRAM applications.