Homogeneous 2D MoTe2 p-n Junctions and CMOS Inverters formed by Atomic-Layer-Deposition-Induced Doping
- Homogeneous 2D MoTe2 p-n Junctions and CMOS Inverters formed by Atomic-Layer-Deposition-Induced Doping
- 황도경; 임준영; Atiye Pezeshki; 오세훈; 김진성; 이영택; 유상혁; 이관형; 최형준; 임성일
- Issue Date
- Advanced materials
- VOL 29-1701798-8
- Recently, α-MoTe2, a 2D transition-metal dichalcogenide (TMD), has shown outstanding properties, aiming at future electronic devices. Such TMD structures without surface dangling bonds make the 2D α-MoTe2 a more favorable candidate than conventional 3D Si on the scale of a few nanometers. The bandgap of thin α-MoTe2 appears close to that of Si and is quite smaller than those of other typical TMD semiconductors. Even though there have been a few attempts to control the charge-carrier polarity of MoTe2, functional devices such as p– n junction or complementary metal– oxide– semiconductor (CMOS) inverters have not been reported. Here, we demonstrate a 2D CMOS inverter and p– n junction diode in a single α-MoTe2 nanosheet by a straightforward selective doping technique. In a single α-MoTe2 flake, an initially p-doped channel is selectively converted to an n-doped region with high electron mobility of 18 cm2 V− 1 s− 1 by atomic-layer-deposition-induced H-doping. The ultrathin CMOS inverter exhibits a high DC voltage gain of 29, an AC gain of 18 at 1 kHz, and a low static power consumption of a few nanowatts. The results show a great potential of α-MoTe2 for future electronic devices based on 2D semiconducting materials.
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