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dc.contributor.author최지원-
dc.contributor.author나렌드라 싱-
dc.contributor.authorWon-Jae Lee-
dc.date.accessioned2021-06-09T04:18:45Z-
dc.date.available2021-06-09T04:18:45Z-
dc.date.issued2017-11-
dc.identifier.citationVOL 71-377-
dc.identifier.issn1369-8001-
dc.identifier.other49494-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/66443-
dc.description.abstractHigh work function molybdenum (Mo) and rhenium (Re) di-oxides were studied without vacuum and thermal process to investigate the contact properties on p-type Si and GaN semiconductors. Polyvinyl alcohol (5 wt% PVA) was used as a binder for the metal oxide powder. ReO2 showed lower electrical resistivity < 0.023 +/- 0.004 Omega cm and better contact characteristics compared to MoO2. Ohmic contacts were formed easily on p-type Si (rho = 9.77 Omega cm) using ReO2 and MoO2. The metal oxide/semiconductor Schottky diodes fabricated by forming contacts on n-type Si (rho = 2.44 Omega cm) were investigated by comparing diode parameters indicating different contact barrier properties of metal oxides. As a wide energy bandgap semiconductor, p-type GaN was utilized to investigate metal oxide contact properties on a high work function semiconductor. Ohmic contact on p-type GaN was obtained using ReO2 after the surface treatment by boiling aqua regia.-
dc.publisherMaterials science in semiconductor processing-
dc.subjectReO2-
dc.subjectNon-vacuum process-
dc.subjectMoO2-
dc.subjectGaN-
dc.subjectHigh work function-
dc.subjectOhmic contact-
dc.titleHigh work function MoO2 and ReO2 contacts for p-type Si and GaN by a room-temperature non-vacuum process-
dc.typeArticle-
dc.relation.page374377-
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