Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields
- Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields
- 정승준; 박진수; 장연식; 변정환; 조경준; 김태영; 김재근; 최유리; 신지원; 홍용택; 이탁희
- Issue Date
- ACS Nano
- VOL 12, NO 7-7116
- As two-dimensional (2D) transition metal dichalcogenides electronic devices are scaled down to the sub-micrometer regime, the active layers of these materials are exposed to high lateral electric fields, resulting in electrical breakdown. In this regard, understanding the intrinsic nature in layer-stacked 2D semiconducting materials under high lateral electric fields is necessary for the reliable applications of their field-effect transistors. Here, we explore the electrical breakdown phenomena originating from avalanche multiplication in MoS2 field-effect transistors with different layer thicknesses and channel lengths. Modulating the band structure and bandgap energy in MoS2 allows the avalanche multiplication to be controlled by adjusting the number of stacking layers. This phenomenon could be observed in transition metal dichalcogenide semiconducting systems due to its quantum confinement effect on the band structure. The relationship between the critical electric field for avalanche breakdown and bandgap energy is well fitted to a power law curve in both monolayer and multilayer MoS2.
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