Effects of Electron Beam Irradiation and Thiol Molecule Treatment on the Properties of MoS 2 Field Effect Transistors
- Effects of Electron Beam Irradiation and Thiol Molecule Treatment on the Properties of MoS 2 Field Effect Transistors
- 정승준; 최유리; 조경준; 박진수; 김태영; 김재근; 신지원; 서준석; 이탁희
- Issue Date
- Journal of the Korean Physical Society
- VOL 72, NO 10-1208
- We investigated the effects of the structural defects intentionally created by electron-beam irradiation with an energy of 30 keV on the electrical properties of monolayer MoS2 field effect transistors (FETs). We observed that the created defects by electron beam irradiation on the MoS2 surface working as trap sites deteriorated the carrier mobility and carrier concentration with increasing the subthreshold swing value and shifting the threshold voltage in MoS2 FETs. The electrical properties of electron-beam irradiated MoS2 FETs were slightly improved by treating the devices with thiol-terminated molecules which presumably passivated the structural defects of MoS2. The results of this study may enhance the understanding of the electrical properties of MoS2 FETs in terms of creating and passivating defect sites.
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