Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors
- Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors
- 전대영; Do-Kywn Kim; So Jeong Park; Yumin Koh; Chu-Young Cho; Gyu-Tae Kim; Kyung-Ho Park
- AlGaN/GaN HEMTs; Effective mobility; Low-frequency noise and carrier number fluctuation; Mobility degradation factors; Series resistance
- Issue Date
- Microelectronic engineering
- VOL 199, NO 5-44
- The AlGaN/GaN high electron mobility transistor (HEMT) is considered a promising device for high-power, high-frequency, and high-temperature applications, as well as high-sensitivity sensors. However, several issues related to mobility, interface properties, and series resistance need to be clarified for a better understanding of the physical operation of AlGaN/GaN HEMTs and for further optimization of their performance. In this work, the electrical properties of AlGaN/GaN HEMTs, including the effects of series resistance, and interface properties with mobility degradation factors were investigated in detail. In addition, the low-frequency noise behavior of AlGaN/GaN HEMTs was examined with a carrier number fluctuation model that considered series resistance effects.
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