Heteroepitaxial Growth of GaN on Unconventional Templates and Layer-Transfer Techniques for Large-Area, Flexible-Stretchable Light-Emitting Diodes
- Heteroepitaxial Growth of GaN on Unconventional Templates and Layer-Transfer Techniques for Large-Area, Flexible-Stretchable Light-Emitting Diodes
- 강진구; Jun Hee Choi; Jinwoo Kim; Hyobin Yoo; Jinyun Liu; Sunil Kim; Chan-Wook Baik; Chae-Ryong Cho; Miyoung Kim; P. V. Braun; Sungwoo Hwang; Tae-Sung Jung
- Issue Date
- Advanced optical materials
- VOL 4, NO 4-521
- There have been significant recent developments in the growth of single-crystal gallium nitride (GaN) on unconventional templates for large-area blue or green light-emitting diodes (LEDs) which, together with layer transfer onto foreign substrates, can enable flexible and stretchable lighting applications. Here, the heteroepitaxial growth of GaN on amorphous and single-crystal substrates employing various interlayers and nucleation layers is reviewed, as well as the use of weak interfaces for layer-transfer onto foreign substrates. Recent progress in low-temperature GaN-based red-green-blue (RGB) LEDs on glass substrates, which has exhibited a calculated efficiency of 11% compared with that from commertial LEDs, is discussed. Layer-transfer techniques with various interlayers are also discussed. These heteroepitaxial GaN growth and layer-transfer technologies are expected to lead to new lighting and display devices with high efficiency and full-color tunability, which are suitable for large-area, stretchable display and lighting applications.
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