Full metadata record

DC FieldValueLanguage
dc.contributor.author최정혜-
dc.contributor.author박재홍-
dc.contributor.author여인원-
dc.contributor.author한규승-
dc.contributor.author황철성-
dc.date.accessioned2021-06-09T04:21:45Z-
dc.date.available2021-06-09T04:21:45Z-
dc.date.issued2019-02-
dc.identifier.citationVOL 9-1127-9-
dc.identifier.issn2045-2322-
dc.identifier.other52337-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/69026-
dc.description.abstractThis work reports on the theoretical equilibrium crystal shapes of GaAs and InAs as a function of temperature and pressure, taking into account the contribution of the surface vibration, using ab-initio thermodynamic calculations. For this purpose, new (111)B reconstructions, which are energetically stable at a high temperature, are suggested. It was found that there was a feasible correspondence between the calculated equilibrium shapes and the experimental shapes, which implied that the previous experimental growth was performed under conditions that were close to equilibrium. In this study, GaAs and InAs were selected as prototype compound semiconductors, but the developed calculation methodology can also be applied to other III&#8211-
dc.description.abstractV compound semiconductor materials.-
dc.publisherScientific Reports-
dc.titleEquilibrium crystal shape of GaAs and InAs considering surface vibration and new (111)B reconstruction: ab-initio thermodynamics-
dc.typeArticle-
dc.relation.page1127-11127-9-
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE