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dc.contributor.author정대환-
dc.contributor.authorShizhao Fan-
dc.contributor.authorYukun Sun-
dc.contributor.authorBrian D. Li-
dc.contributor.authorDiego Martin-Martin-
dc.contributor.authorMinjoo L. Lee-
dc.date.accessioned2021-06-09T04:21:51Z-
dc.date.available2021-06-09T04:21:51Z-
dc.date.issued2019-05-
dc.identifier.citationVOL 9, NO 3-665-
dc.identifier.issn2156-3381-
dc.identifier.other52445-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/69120-
dc.description.abstractThe highest efficiency heteroepitaxial GaAs solar cells on Si have historically been grown in the p + /n polarity, which was preferred due to the decreased sensitivity of open-circuit voltage in such cells to threading dislocations. The n± /p polarity also has potential advantages due to the higher mobility of electrons than holes in GaAs, and most multi-junction solar cells in the literature are grown in this polarity. Here, we demonstrate n + /p GaAs solar cells on Si with a certified AM1.5G efficiency of 16.8%, approaching the best certified efficiency of 18.1% for p + /n cells in the literature. The high efficiency of our n + /p cells is primarily due to the short-circuit current density of 26.5 mA/cm 2 , which is significantly higher than prior p + /n record cells. The strong carrier collection results from the use of a highly transparent AlInP window layer, thin n + emitter, and a relatively high minority electron diffusion length in the p-type base. The high quantum efficiency of these n + /p cells at wavelengths of 700-880 nm makes them promising for future triple-junction devices on Si, where the GaAs will serve as a middle sub-cell.-
dc.publisherIEEE Journal of Photovoltaics-
dc.title16.8%-Efficient n+/p GaAs Solar Cells on Si With High Short-Circuit Current Density-
dc.typeArticle-
dc.relation.page660665-
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