Role of the short-range order in amorphous oxide on MoS2/a-SiO2 and MoS2/a-HfO2 interfaces
- Role of the short-range order in amorphous oxide on MoS2/a-SiO2 and MoS2/a-HfO2 interfaces
- 최정혜; 박재홍; 여인원; 한규승; 황철성
- amorphous oxides; effective mass; interfacial atomic structur; molybdenum disulfide; MoS2/a-SiO2; MoS2/a-HfO2; short-range order
- Issue Date
- Physica Status Solidi. B, Basic Solid State Physics
- VOL 256, NO 8-1900002-5
- Influence of Cr on the electronic properties of float‐ zone n‐ Si containing dislocations and NV defects are investigated by deep level transient spectroscopy (DLTS) and light beam induced current (LBIC). In samples quenched after Cr in‐ diffusion, a very broad DLTS band appears and the electron– hole relaxation rate increases dramatically. Results are explained by the formation of Cr related nano‐ precipitates stimulated by dislocations and nitrogen– vacancy defects.
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