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dc.contributor.author정대환-
dc.contributor.authorZeyu Zhang-
dc.contributor.authorJustin C. Norman-
dc.contributor.authorWeng W. Chow-
dc.contributor.authorJohn E. Bowers-
dc.date.accessioned2021-06-09T04:22:11Z-
dc.date.available2021-06-09T04:22:11Z-
dc.date.issued2019-11-
dc.identifier.citationVOL 25, NO 6-1900509-9-
dc.identifier.issn1077-260X-
dc.identifier.other52740-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/69394-
dc.description.abstractThe linewidth enhancement factor ( H) is an important parameter for semiconductor lasers. In this work, we investigate, both theoretically and experimentally, the key parameters that affect H of InAs/GaAs quantum dot lasers. Both dot uniformity and doping density are found to be critical in achieving small H in quantum dot lasers. The prospects for quantum dot lasers in isolator-free and narrow linewidth applications are also discussed.-
dc.publisherIEEE journal on selected topics in quantum electronics-
dc.titleLinewidth enhancement factor in InAs/GaAs quantum dot lasers and its implication in isolator-free and narrow linewidth applications-
dc.typeArticle-
dc.relation.page1900509-11900509-9-
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