Reduction of the Hysteresis Voltage in Atomic-Layer-Deposited p-Type SnO Thin-Film Transistors by Adopting an Al2O3 Interfacial Layer
- Reduction of the Hysteresis Voltage in Atomic-Layer-Deposited p-Type SnO Thin-Film Transistors by Adopting an Al2O3 Interfacial Layer
- 최정혜; 여인원; 장윤진; 김준식; 한정환; 황철성
- p-Type SnO TFT; Atomic-Layer-Deposition; Al2O3 Interfacial Layer; Reduction of the Hysteresis Voltage; DFT calculations
- Issue Date
- Advanced electronic materials
- VOL 5, NO 7, 1900371
- The origin of hysteresis in the drain– source current (IDS)– gate‐ source voltage (VGS) characteristics of atomic‐ layer‐ deposited (ALD) p‐ type SnO thin‐ film transistors (TFTs) is examined by adding ALD Al2O3 interfacial layers (IL) between the SnO channel layer and the SiO2 gate insulator (GI) layer. SnO TFTs with SiO2 GI exhibit a large hysteresis voltage (Vhy) due to the trap state density near the interface between the SnO active layer and the SiO2 GI (known as the border trap). Both experimental results and theoretical calculations show that the origin of border traps is the Sn+0Si gap states in SiO2, which is induced by the Sn diffusion into the SiO2 layer. The use of Al2O3 films as ILs suppresses this diffusion. The effectiveness, however, is dependent on the thickness, crystallinity, and density of the Al2O3 films. The Vhy of the SnO TFTs can be decreased when the thickness and density of the ILs is increased if the amorphous structure of the Al2O3 IL is maintained after the rapid thermal annealing process. p‐ Type ALD SnO TFTs with optimum ILs exhibit a high on‐ off ratio of IDS (1.2 × 105), high field‐ effect mobility (1.6 cm2 V− 1 s− 1), and a small Vhy (0.2 V).
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