Physical origin of the optical degradation of InAs quantum dot lasers
- Physical origin of the optical degradation of InAs quantum dot lasers
- 정대환; Matteo Buffolo; Fabio Samparisi; Carlo De Santi; Justin Norman; John Bowers; Robert Herrick; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini
- Issue Date
- IEEE journal of quantum electronics
- VOL 55, NO 3-2000607-7
- We present an extensive analysis of the physical mechanisms responsible for the degradation of 1.3-µ m InAs quantum dot lasers epitaxially grown on Si, for application in silicon photonics. For the first time, we characterize the degradation of the devices by combined electro-optical measurements, electroluminescence spectra, and current-voltage analysis. We demonstrate the following original results: when submitted to a current step-stress experiment: 1) QD lasers show a measurable increase in threshold current, which is correlated to a decrease in slope efficiency; 2) the degradation process is stronger, when devices are stressed at current higher than 200 mA, i.e., in the stress regime, where both ground-state and excited-state emission are present; and 3) in the same range of stress currents, an increase in the defect-related current components is also detected, along with a slight decrease in the series resistance. Based on the experimental evidence collected within this paper, the degradation of QD lasers is ascribed to a recombination-enhanced defect reaction (REDR) process, activated by the escape of electrons out of the quantum dots.
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