High-speed colloidal quantum dot photodiodes via accelerating charge separation at metal-oxide interface
- High-speed colloidal quantum dot photodiodes via accelerating charge separation at metal-oxide interface
- 한일기; 박준서; 황도경; 차순규; 정신영; 김지훈; 주병권; 강성준
- quantum dots; photodiodes; high-speed; charge separation
- Issue Date
- VOL 15, NO 13-1900008-9
- With ever‐ growing technological demands in the imaging sensor industry for autonomous driving and augmented reality, developing sensors that can satisfy not only image resolution but also the response speed becomes more challenging. Herein, the focus is on developing a high‐ speed photosensor capable of obtaining high‐ resolution, high‐ speed imaging with colloidal quantum dots (QDs) as the photosensitive material. In detail, high‐ speed QD photodiodes are demonstrated with rising and falling times of τr = 28.8 ± 8.34 ns and τf = 40 ± 9.81 ns, respectively, realized by fast separation of electron– hole pairs due to the action of internal electric field at the QD interface, mainly by the interaction between metal oxide and the QD's ligands. Such energy transfer relations are analyzed and interpreted with time‐ resolved photoluminescence measurements, providing physical understanding of the device and working principles.
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- KIST Publication > Article
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