Electronic structure of monolayer 1T′-MoTe2 grown by molecular beam epitaxy
- Electronic structure of monolayer 1T′-MoTe2 grown by molecular beam epitaxy
- 류혜진; Shujie Tang; Chaofan Zhang; Chunjing Jia; Choongyu Hwang; Makoto Hashimoto; Donghui Lu; Zhi Liu; Thomas P. Devereaux; Zhi-Xun Shen; Sung-Kwan Mo
- Issue Date
- APL materials
- VOL 6, NO 2-026601-7
- Monolayer transition metal dichalcogenides (TMDCs) in the 1T0 structural phase have drawn a great deal of attention due to the prediction of quantum spin Hall insulator states. The band inversion and the concomitant changes in the band topology induced by the structural distortion from 1T to 1T0 phases are well established. However, the bandgap opening due to the strong spin-orbit coupling (SOC) is only verified for 1T0 -WTe2 recently and still debated for other TMDCs. Here we report a successful growth of high-quality monolayer 1T0 -MoTe2 on a bilayer graphene substrate through molecular beam epitaxy. Using in situ angle-resolved photoemission spectroscopy (ARPES), we have investigated the low-energy electronic structure and Fermi surface topology. The SOC-induced breaking of the band degeneracy points between the valence and conduction bands is clearly observed by ARPES. However, the strength of
SOC is found to be insufficient to open a bandgap, which makes monolayer 1T0 -MoTe2 on bilayer graphene a semimetal.
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