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dc.contributor.author최준우-
dc.contributor.authorSi Nyeon Kim-
dc.contributor.authorKu Hoon Chung-
dc.contributor.authorSang Ho Lim-
dc.date.accessioned2021-06-09T04:23:56Z-
dc.date.available2021-06-09T04:23:56Z-
dc.date.issued2020-05-
dc.identifier.citationVOL 823, 153727-
dc.identifier.issn0925-8388-
dc.identifier.other54363-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/70921-
dc.description.abstractThe manipulation of the bias field of the free-layer in giant magnetoresistance spin-valves is of great importance in sensor applications because this feature dominantly affects the low-field sensitivity of magnetoresistance. In this study, it is demonstrated that the bias field of the free-layer can be manipulated by controlling the thickness of the pinned-layer deposited afterward. The key to success is the utilization of the magnetostatic interactions between the free-poles formed on the N&eacute-
dc.description.abstractel walls in both free- and pinned-layers. Magnetostatic interactions play a role in stabilizing the antiparallel magnetization state and hence in suppressing the magnetization switching of the free-layer from an antiparallel to a parallel state. A nearly zero bias field is achieved for a Ta-buffered sample with a pinned-layer thickness of 1.75 nm, where a very high low-field sensitivity of 7.7 mV/mA·Oe is obtained.-
dc.publisherJournal of alloys and compounds-
dc.titleManipulation of free-layer bias field in giant-magnetoresistance spin valve by controlling pinned-layer thickness-
dc.typeArticle-
dc.relation.page153727-
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