Tungsten oxide nonvolatile memory devices using photothermal in-situ oxidation method
- Tungsten oxide nonvolatile memory devices using photothermal in-situ oxidation method
- 손동익; 이규승; 심재호; 박정훈; 권경목; 유경식
- Nonvolatile memory; Resistive switching; Tungsten oxide; Photothermal oxidation
- Issue Date
- Materials letters
- VOL 272, 127805
- The tungsten oxide nonvolatile memory devices were fabricated using the photothermal in-situ oxidation method. The photothermal in-situ oxidation method can monitor the oxidation process in real time. Raman spectra revealed that tungsten oxides were formed by thermal oxidation. The ON/OFF ratio of the current bistability for the device was as large as ~ 102 at a 2 V reading voltage, and the cycling endurance of the ON/OFF switching for the devices was stable without noticeable degradation. Memory mechanisms for device are described using fitted the I– V curves.
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