Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)
- Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)
- 박종극; 김인호; 이수연; 김재욱; 곽준영; 박종길; 정연주; 김태윤; 손희락
- neuromorphic; Ta2O5; bipolar; CRS; schottky barrier; resistive switching
- Issue Date
- Scientific Reports
- VOL 10, 11247
- We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxygen scavenger layer thickness) conditions. In addition, the origin of the switching mode transition was investigated through electrical and optical measurement, where the conductance is believed to be determined by two factors: formation of conductive flament and modulation of Schottky barrier. This result helps design a resistive switching device with desirable and stable switching behavior.
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