Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)

Title
Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)
Authors
박종극김인호이수연김재욱곽준영박종길정연주김태윤손희락
Keywords
neuromorphic; Ta2O5; bipolar; CRS; schottky barrier; resistive switching
Issue Date
2020-07
Publisher
Scientific Reports
Citation
VOL 10, 11247
Abstract
We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxygen scavenger layer thickness) conditions. In addition, the origin of the switching mode transition was investigated through electrical and optical measurement, where the conductance is believed to be determined by two factors: formation of conductive flament and modulation of Schottky barrier. This result helps design a resistive switching device with desirable and stable switching behavior.
URI
https://pubs.kist.re.kr/handle/201004/71761
ISSN
2045-2322
Appears in Collections:
KIST Publication > Article
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