A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping
- A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping
- 류혜진; 이지은; Jinwoong Hwang; Minhee Kang; Hyun-Jeong Joo; Kyoo Kim; Yongsam Kim; Namdong Kim; Anh Tuan Duong; Sunglae Cho; Sung-Kwan Mo; Choongyu Hwang; Imjeong Ho-Soon Yang
- Issue Date
- Applied surface science
- VOL 520, 146314
- Recent advances in two-dimensional (2D) crystals make it possible to realize an ideal interface structure that is required for device applications. Specifically, a p-n junction made of 2D crystals is predicted to exhibit an atomically well-defined interface that will lead to high device performance. Using angle-resolved photoemission spectroscopy, a simple surface treatment was shown to allow the possible formation of such an interface. Ta adsorption on the surface of a p-doped SnSe shifts the valence band maximum towards the higher binding energy due to the charge transfer from Ta to SnSe that is highly localized at the surface due to the layered structure of SnSe. As a result, the charge carriers of the surface are changed from holes of its bulk characteristics to electrons, while the bulk remains as a p-type semiconductor. This observation suggests that the well-defined interface of a p-n junction with an atomically thin n-region is formed between Ta-adsorbed surface and bulk.
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