Carrier？phonon interaction of GaAs/Al0.3Ga0.7As quantum dots grown by droplet epitaxy

Abstract

We examined several types of GaAs/Al0.3Ga0.7As quantum dots (QDs) grown by the droplet epitaxy (DE) technique. Using comparative optical analyses using multi-oscillator models, we investigated the individual exciton&#8211

phonon coupling channels of several QD types with diferent temperature dispersions. Each phonon dispersion was calculated for up to three diferent coupled modes in a phonon feld. Nanoscale phonon engineering can exploit the dynamics of exciton&#8211

phonon interactions for the design of efcient acousto-excitonic devices and engineered QD single-photon sources.