Defect states and kinetic parameter analysis of ZnAl2O4 nanocrystals by X-ray photoelectron spectroscopy and thermoluminescence

Abstract

Defect states in ZnAl2O4 have a signifcant role in its applicability as a luminescent material. To understand the nature and distribution of defects in its crystal lattice, thermoluminescence (TL) study has been carried out. Excellent TL response is observed from γ- and ultraviolet-irradiated samples at diferent doses and exposure durations, respectively. Diferent type of fuels employed in combustion synthesis show a remarkable efect on the trap distribution and hence luminescence properties. Shallow and deep traps are observed in crystals attributed to O？ vacancies and F+ centers. The mechanism of trapping, retrapping and recombination have been depicted through schematic band model diagram. X-ray photoelectron spectroscopy indicated the presence of various types of defects specifcally AlZn antisite defect, oxygen and zinc vacancies which are further upheld by photoluminescence and Raman spectroscopy. All results when summed up, predict ZnAl2O4 to be a quality material for dosimetry.