Recent Advances in InAs Quantum Dot Lasers Grown on OnAxis (001) Silicon by Molecular Beam Epitaxy
- Recent Advances in InAs Quantum Dot Lasers Grown on OnAxis (001) Silicon by Molecular Beam Epitaxy
- 정대환; Justin Norman; Yating Wan; Songtao Liu; Robert Herrick; Jennifer Selvidge; Kunal Mukherjee; Arthur C. Gossard; John E. Bowers
- Issue Date
- Physica Status Solidi. A, Applications and Materials Science
- VOL 216, NO 1, 1800602
- Recent advances in InAs quantum dot (QD) lasers epitaxially grown on onaxis (001) silicon are reported. FabryPerot QD lasers show a CW threshold current of 4.8mA at 20°C, extrapolated laser lifetimes more than 10 million hours when aged at 35°C, NRZ direct modulation up to 12 Gbps, and low linewidth enhancement factor of ~0.1. Ultrasmall microring QD lasers reveal a CW threshold of 0.5mA and singlesection modelocked QD lasers demonstrate 490fs ultrashort pulses at a 31GHz repetition frequency. Possible ways to grow QD lasers on Si without misfit dislocations in active region are considered in order to further enhance reliability of QD Si lasers at high aging temperature and aging current density.
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