Flexible GaAs Photodetectors with Ultrathin Thermally Grown Silicon Dioxide as a LongLived Barrier for Chronic Biomedical Implants
- Flexible GaAs Photodetectors with Ultrathin Thermally Grown Silicon Dioxide as a LongLived Barrier for Chronic Biomedical Implants
- 최원준; 한재훈; 정대환; 류근환; 홍남기; 금대명; 김태수; 안승엽; 김상현; 유기준
- Issue Date
- Advanced Photonics Research
- VOL 2, NO 2, 2000051
- Herein, an approach to form highquality GaAsbased flexible photodetectors (PDs) is first demonstrated by metal wafer bonding (MWB) and highthroughput epitaxial liftoff (ELO) with encapsulated thermally grown silicon dioxide (tSiO2) for chronic biomedical implants. The flexible GaAs PDs demonstrate responsivity over a wide range of visible and nearinfrared wavelengths. Regarding certain diagnoses, highperformance PDs are essential for precise treatments with longterm optoelectronic implants, and the longterm stability and reliable encapsulation of GaAs PDs will play a major role when optoelectronics are injected into biofluids. tSiO2, as an encapsulation barrier, is stable without increasing the leakage current for over 120？h in phosphatebuffered saline (PBS) at 70？°C. By Arrhenius scaling, the device shows a 700day lifetime with stable operation in a biofluid at 37？°C. Finally, by measuring the mass of arsenic using an inductively coupled plasma mass spectrometer (ICP/MS), the tSiO2 encapsulation barrier is capable of preventing toxic elements from leaching out to surrounding tissues. The technology may provide approaches based on III？V materials for expanding highperformance optoelectronic devices to biomedical implants, namely, a broad range of highresolution retinal prostheses for blindness or the integration for measuring physiological parameters, such as tissue oxygenation and neural activity in the cerebral cortex.
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