Reconfigurable thin-film transistors based on a parallel array of Si-nanowires
- Reconfigurable thin-film transistors based on a parallel array of Si-nanowires
- 전대영; So Jeong Park; Sebastian Pregl; Thomas Mikolajick; Walter M. Weber
- Si nanowire; Reconfigurable thin-film transistors; ambipolar transistors; Schottky-barrier; current？voltage contour map
- Issue Date
- Journal of applied physics
- VOL 129, 124504
- The implementation of advanced electronic devices in the fourth industrial revolution era can be achieved with bottom-up grown silicon
nanowire (Si-NW) based transistors. Here, we have fabricated reconfigurable Schottky-barrier (SB) thin-film transistors (TFTs) consisting of
a parallel array of bottom-up grown single-crystalline Si-NWs and investigated in detail their device length dependent electrical performance and transport mechanism with current？voltage transport-map, key electrical parameters, and numerical simulation. In particular, the effective extension length (Lext_eff) limited significantly the overall conduction behavior of reconfigurable Si-NW SB-TFTs, such as ambipolarity, mobility, threshold voltage, and series resistance. This work provides important information for a better understanding of the physical operation of reconfigurable transistors with SB contacts and further optimization of their performance for implementing practical applications.
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