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dc.contributor.author천동원-
dc.contributor.authorJongmin Byun-
dc.contributor.authorHyeunhwan An-
dc.contributor.author홍재영-
dc.contributor.authorJaeyun Moon-
dc.date.accessioned2021-06-09T04:26:27Z-
dc.date.available2021-06-09T04:26:27Z-
dc.date.issued2021-04-
dc.identifier.citationVOL 544, 148834-
dc.identifier.issn0169-4332-
dc.identifier.other56885-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/73157-
dc.description.abstractIn this study, polycrystalline SnSe samples were prepared by a series of mechanical alloying (MA), uniaxial compaction, and subsequently pressureless sintering. It was found that the grains in the resultant SnSe samples grow along the (1 1 1) plane direction, resulting in forming a layered structure. Depending on the sintering time, the SnSe samples show the conversion of p-type conduction with the Seebeck coefficient value of +503 μV/K to n-type conduction with the Seebeck coefficient value of ?1500 μV/K. The samples were characterized using X-ray diffraction and Raman spectroscopy to reveal that the transition of the Seebeck properties is due to the imbalanced composition of SnSe caused by impurities (SnSe2, SnSe1-x) formed during pressureless sintering. Also, the experiments and characterization results demonstrated a possibility to enhance thermoelectric properties if the pressureless sintering conditions would be well-controlled.-
dc.publisherApplied surface science-
dc.subjectTin selenide-
dc.subjectMechanical alloying-
dc.subjectPressureless sintering-
dc.subjectThermoelectric property-
dc.titleThermoelectric performance of n-type polycrystalline SnSe with surface depletion by pressureless sintering-
dc.typeArticle-
dc.relation.page148834-
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