TypeI Energy Level Alignment at the PTCDA―Monolayer MoS2 Interface Promotes Resonance Energy Transfer and Luminescence Enhancement
- TypeI Energy Level Alignment at the PTCDA―Monolayer MoS2 Interface Promotes Resonance Energy Transfer and Luminescence Enhancement
- 박수형; Niklas Mutz; Sergey A Kovalenko; Thorsten Schultz; Dongguen Shin; Areej Aljarb; LainJong Li; Vincent Tung; Patrick Amsalem; Emil JW ListKratochvil; Julia Stahler; Xiaomin Xu; Sylke Blumstengel; Norbert Koch
- Issue Date
- Advanced science
- VOL 8, NO 12, 2100215
- Van der Waals heterostructures consisting of 2D semiconductors and conjugated molecules are of increasing interest because of the prospect of a synergistic enhancement of (opto)electronic properties. In particular, perylenetetracarboxylic dianhydride (PTCDA) on monolayer (ML)-MoS2 has been identified as promising candidate and a staggered type-II energy level alignment and excited state interfacial charge transfer have been proposed. In contrast, it is here found with inverse and direct angle resolved photoelectron spectroscopy that PTCDA/ML-MoS2 supported by insulating sapphire exhibits a straddling type-I level alignment, with PTCDA having the wider energy gap. Photoluminescence (PL) and sub-picosecond transient absorption measurements reveal that resonance energy transfer, i.e., electron？hole pair (exciton) transfer, from PTCDA to ML-MoS2 occurs on a sub-picosecond time scale. This gives rise to an enhanced PL yield from ML-MoS2 in the heterostructure and an according overall modulation of the photoresponse. These results underpin the importance of a precise knowledge of the interfacial electronic structure in order to understand excited state dynamics and to devise reliable design strategies for optimized optoelectronic functionality in van der Waals heterostructures.
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