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Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4.

Title: Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4.

Authors: 손창식; 황성민; 김성일; 황성민; 김무성; 민석기; 김은규; 김용

Keywords: lateral growth

Issue Date: 1996-01

Publisher: Proceedings of the microprocess '96

Citation: , 166-169

URI: https://pubs.kist.re.kr/handle/201004/7677

Appears in Collections:: KIST Publication > Conference Paper

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