Cavity-enhanced InGaAs photo-FET with a metal gate reflector fabricated by wafer bonding on Si

Abstract

Although an InGaAs photo field-effect transistor (photo-FET) is a promising solution for high-performance photodetector due to its internal gain mechanism, the reported opto-electrical performance is limited by the low absorption caused by its thin body thickness and unoptimized electrical properties. To overcome this limitation, an InGaAs photo-FET with a metal gate reflector was demonstrated to achieve both high electrical and optical performance. We designed and optimized a metal-oxide-semiconductor (MOS) structure with the metal gate reflector by using numerical calculation and process optimization. Thanks to the optimization of both electrical and optical characteristics, the InGaAs photo-FETs were successfully demonstrated at the wavelengths of 1305 nm and 1550 nm. Therefore, this wafer-bonded InGaAs photo-FET with the metal gate reflector is a promising candidate for a high-performance and broad-band SWIR photodetector on a Si CMOS platform. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.