Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations.
- Title
- Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations.
- Keywords
- carbon
- Issue Date
- 1996-01
- Publisher
- Proceedings of the 3rd Korean conference on semiconductors
- Citation
- , 77-78
- Appears in Collections:
- KIST Publication > Conference Paper
- Files in This Item:
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