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The characteristics of nitrogen implanted tungsten film as a new diffusion barrier for metal organic chemical vapor deposited Cu metallization.

Title
The characteristics of nitrogen implanted tungsten film as a new diffusion barrier for metal organic chemical vapor deposited Cu metallization.
Authors
김용태; 민석기; C. S. Kwon; I. H. Choi
Keywords
nitrogen implantation
Issue Date
1995-01
Publisher
Japanese journal of applied physics
Citation
v. 34, 78-81
URI
https://pubs.kist.re.kr/handle/201004/7734
Appears in Collections:
KIST Publication > Article
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