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Enhanced disordering of GaAs/AlGaAs multi quantum well by rapid thermal annealing using plasma enhanced chemical vapor deposition SiN capped layer grown at high RF power conditoin.

Title: Enhanced disordering of GaAs/AlGaAs multi quantum well by rapid thermal annealing using plasma enhanced chemical vapor deposition SiN capped layer grown at high RF power conditoin.

Authors: 김용; 최원준; 이정일; 한일기; 강광남; 박홍이; 조규만

Keywords: disordering

Issue Date: 1994-03

Publisher: Journal of material science letters

Citation: v. 13, 326-?

URI: https://pubs.kist.re.kr/handle/201004/7759

Appears in Collections:: KIST Publication > Article

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