DSpace at KIST: Effect of Cl/H input ratio on the growth rate of MoSi₂ coatings formed by chemical vapor deposition of Si on Mo substrates from SiCl₄H₂ precursor gases

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Effect of Cl/H input ratio on the growth rate of MoSi₂ coatings formed by chemical vapor deposition of Si on Mo substrates from SiCl₄H₂ precursor gases

Title: Effect of Cl/H input ratio on the growth rate of MoSi₂ coatings formed by chemical vapor deposition of Si on Mo substrates from SiCl₄H₂ precursor gases

Authors: 윤진국; 김긍호; 변지영; 이종권; 윤호상; 홍경태

Keywords: etching effect; Si chemical vapor deposition (CVD); growth rate; MoSi₂ coating; molybdenum

Issue Date: 2003-07

Publisher: Surface and Coatings Technology

Citation: VOL 172, 176-183

URI: https://pubs.kist.re.kr/handle/201004/7832

ISSN: 0257-8972

Appears in Collections:: KIST Publication > Article

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