Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices

Abstract

A new method to estimate the channel doping concentration (Nd) in highly doped fully-depleted SOI MOSFETs The separation between the threshold voltage (Vth) and the flat band voltage (Vfb) as a function of Nd Confirmation of the validity of proposed method using the twodimensional (2D) simulation and experimental results The method is applied to various device structures consisting of different silicon thicknesses (tSi) and widths.