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dc.contributor.author김은규-
dc.contributor.author조훈영-
dc.contributor.author한철원-
dc.contributor.author김춘근-
dc.contributor.author민석기-
dc.date.accessioned2015-12-02T02:58:05Z-
dc.date.available2015-12-02T02:58:05Z-
dc.date.issued198712-
dc.identifier.citationv. 27, no. 6, 674-679-
dc.identifier.other921-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/7932-
dc.publisher새물리-
dc.subjectRTA-
dc.subjectHB-GaAs-
dc.subjectICTS-
dc.subjectEL2-
dc.titleRTA 에 따른 HB-GaAs 에서의 midgap level 들에 관한 isothermal capacitance transient spectroscopy (ICTS) 연구 : EL2(I).-
dc.typeArticle-
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