Hardware Implementation of Network Connectivity Relationships Using 2D hBN­-Based Artificial Neuron and Synaptic Devices

Authors
Jo, YooyeonWoo, Dong YeonNoh, GichangPark, EunpyoKim Min JeeYong Woo SungLee, Dae KyuPark, JongkilKim, JaewookJeong, YeonJooLee, SuyounKim, InhoPark, Jong­KeukPark, SeongsikKwak, Joon Young
Issue Date
2024-03
Publisher
John Wiley & Sons Ltd.
Citation
Advanced Functional Materials, v.34, no.10
Abstract
Brain-inspired neuromorphic computing has been developed as a potential candidate for solving the von Neumann bottleneck of traditional computing systems. 2D materials-based memristors have been exponentially investigated as promising building blocks of neuromorphic computing because of their excellent electrical performance, simple structure, and small device scale. However, while many researchers have focused on looking into individual artificial neuromorphic devices based on memristors, only few studies on the integration of artificial neuron and synaptic devices have been reported. In this work, both volatile and nonvolatile memristors are fabricated by using a 2D hexagonal boron nitride film for artificial neuron and synaptic devices, respectively. The leaky-integrate-and-fire neuron performance and synaptic functions (e.g., synaptic weight plasticity and spike-timing-dependent plasticity) are well emulated with the fabricated volatile and nonvolatile devices. The MNIST image classification is conducted based on the experimental data. For the first time, an artificial neuron-synapse-neuron neural network is physically constructed using the artificial neuron and synaptic devices to mimic the biological neural networks. The synaptic connection strength modulation is experimentally demonstrated between the neurons depending on the conductance state of the synapse, paving the way for the development of large-scale neural network hardware.
Keywords
MEMRISTIVE CROSSBAR ARRAYS; ELECTRONIC SYNAPSES; DYNAMICS; 2D materials; RRAM; neuron and synaptic devices; artificial neural networks
ISSN
1616-301X
URI
https://pubs.kist.re.kr/handle/201004/79760
DOI
10.1002/adfm.202309058
Appears in Collections:
KIST Article > 2023
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