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dc.contributor.author김은규-
dc.contributor.author조훈영-
dc.contributor.author박승철-
dc.contributor.author김용태-
dc.contributor.author민석기-
dc.date.accessioned2015-12-02T02:58:30Z-
dc.date.available2015-12-02T02:58:30Z-
dc.date.issued198712-
dc.identifier.citationv. 27, no. 6, 680-685-
dc.identifier.other920-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/7976-
dc.publisher새물리-
dc.subjectdeep level-
dc.subjectHB-GaAs-
dc.subjectEL2-
dc.titleHB-GaAs 에서의 deep level 과 EL2 origin 에 관한 연구 : EL2(II).-
dc.typeArticle-
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