KIST Library Institutional Repository

리간드 치환반응 기반의 전하주입 조절 특성을 갖는 양자점 발광다이오드 소자

Author

배완기; 조진한; 김희숙; 정승준; 조익준

Assignee

한국과학기술연구원

Regitration Date

2017-10-31

Registration No.

1794082

Application Date

2016-06-03

Application No.

2016-0069720

Country

KO

URI

https://pubs.kist.re.kr/handle/201004/80114

Appears in Collections:

KIST Patent > 2016

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