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Growth rate of MoSi2 layer formed by CVD of Si on Mo substrate and oxidation behavior of MoSi2/Mo couple

Title
Growth rate of MoSi2 layer formed by CVD of Si on Mo substrate and oxidation behavior of MoSi2/Mo couple
Authors
윤진국; 변지영; 이강욱; 이종무; 김재수
Keywords
CVD; MoSi//2 layer; SiCl//4/H//2; hot wall; oxidation
Issue Date
1994-01
Publisher
대한금속학회지; Journal of the Korean inst. of met. & mater.
Citation
v. 32, no. 3, 313-320
URI
https://pubs.kist.re.kr/handle/201004/8106
Appears in Collections:
KIST Publication > Article
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