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dc.contributor.authorKim, Yong Tae-
dc.date.accessioned2024-01-12T09:41:28Z-
dc.date.available2024-01-12T09:41:28Z-
dc.date.created2022-01-14-
dc.date.issued2001-09-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/83814-
dc.titleFerroelectric memory window in strained (Ba0.5, Sr 0.5)TiO3 thin films-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation, pp.0-
dc.citation.startPage0-
dc.citation.endPage0-
dc.relation.isPartOf10th international meeting-

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