Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Yong Tae | - |
| dc.date.accessioned | 2024-01-12T09:42:25Z | - |
| dc.date.available | 2024-01-12T09:42:25Z | - |
| dc.date.created | 2022-01-14 | - |
| dc.date.issued | 2001-04-16 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/83858 | - |
| dc.title | A method of improving dielectric constant and adhesion strength of methysilsesquioxyane by using a NH3 plasma treatment | - |
| dc.type | Conference | - |
| dc.description.journalClass | 1 | - |
| dc.identifier.bibliographicCitation | , pp.231 - 0 | - |
| dc.citation.startPage | 231 | - |
| dc.citation.endPage | 0 | - |
| dc.relation.isPartOf | Material Reserch Society | - |
- Appears in Collections:
- KIST Conference Paper > 2001
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