Growth of Al//2O//3 epitaxial films on p-Si substrates by low-pressure metalorganic chemical vapor deposition.

Title
Growth of Al//2O//3 epitaxial films on p-Si substrates by low-pressure metalorganic chemical vapor deposition.
Authors
염상섭윤영수T. W. KimW. N. KangP. H. HurC. Y. Kim
Keywords
thin films; Al//2O//3; MOCVD
Issue Date
1992-01
Publisher
응용물리; Korean appl. phys.
Citation
v. 5, 169-173
URI
https://pubs.kist.re.kr/handle/201004/8460
Appears in Collections:
KIST Publication > Article
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