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dc.contributor.authorChoi, Won Jun-
dc.contributor.authorLee, Seok-
dc.date.accessioned2024-01-12T11:41:31Z-
dc.date.available2024-01-12T11:41:31Z-
dc.date.created2022-01-14-
dc.date.issued1994-01-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/86037-
dc.titleQuantum well disordering by using plasma enhanced chemical vapor deposited SiNx film as a capping layer-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationChina, pp.0-
dc.citation.titleChina-
dc.citation.startPage0-
dc.citation.endPage0-
dc.relation.isPartOf1st Korea-Chinese semiconductor conference - 직접입력-
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KIST Conference Paper > Others
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