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dc.contributor.author김상현-
dc.contributor.author최원준-
dc.contributor.author박민수-
dc.contributor.author금대명-
dc.date.accessioned2024-01-12T12:03:44Z-
dc.date.available2024-01-12T12:03:44Z-
dc.date.issued2017-05-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/86306-
dc.title고속 에피택셜 리프트오프를 이용한 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자-
dc.typePatent-
dc.date.registration2017-05-29-
dc.date.application2015-05-19-
dc.identifier.patentRegistrationNumber10-1743017-
dc.identifier.patentApplicationNumber2015-0069836-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2015
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