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Effect of dopants on cobalt silicidation behavior at metal-oxide-semiconductor field-effect transistor sidewall spacer edge

Title
Effect of dopants on cobalt silicidation behavior at metal-oxide-semiconductor field-effect transistor sidewall spacer edge
Authors
김종채; Yeong-Cheol Kim; 김병국
Keywords
cobalt silicidation; void; lightly doped drain (LDD); MOSFET
Issue Date
2001-10
Publisher
한국세라믹학회지; Journal of the Korean Ceramic Society
Citation
VOL 38, NO 10, 871-875
URI
https://pubs.kist.re.kr/handle/201004/8780
ISSN
1229-7801
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KIST Publication > Article
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