Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

Authors
Shin JaekyunKim Kyung-HoDoo-Seung UmHochan LeeSeongdong LimChang, JoonyeonKoo, Hyun CheolMin-Wook OhHyunhyub KoKim Hyung-jun
Citation
2013 한국자기학회 동계 학술대회
URI
https://pubs.kist.re.kr/handle/201004/92720
Appears in Collections:
KIST Conference Paper > Others
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