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dc.contributor.author김성일-
dc.contributor.author김무성-
dc.contributor.author김용-
dc.contributor.author손창식-
dc.contributor.author황성민-
dc.contributor.author민병돈-
dc.contributor.author김은규-
dc.contributor.author민석기-
dc.date.accessioned2015-12-02T03:13:24Z-
dc.date.available2015-12-02T03:13:24Z-
dc.date.issued199608-
dc.identifier.citationVOL 69, NO 6, 815-817-
dc.identifier.issn00036951-
dc.identifier.other6436-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/9273-
dc.publisherApplied physics letters-
dc.subjectMOCVD-
dc.subjectCBr4-
dc.subjectGaAs-
dc.titleControl of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates-
dc.typeArticle-
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