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Tilt-axis effect on oxidation behavior and capacitance-voltage characteristics of (100) silicon

Title: Tilt-axis effect on oxidation behavior and capacitance-voltage characteristics of (100) silicon

Authors: H. J. Woo; D. J. Choi; 김긍호

Keywords: silicon; thermal oxidation; stacking fault; convergent beam electron diffraction; lattice strain; thermal strain

Issue Date: 1997-11

Publisher: Journal of materials science

Citation: VOL 32, 6101-6106

URI: https://pubs.kist.re.kr/handle/201004/9279

ISSN: 0022-2461

Appears in Collections:: KIST Publication > Article

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